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PLASMA CUBE 400 - PVD System for Deposition of ta-DLC by Pulsed Arc Plasma
This PVD Vacuum Plant allows the generation of various types of surface deposition coatings (DLC ta-C, TiN, ZrN) with hardness up to 5500 HV (100% carbon), making it flexible for many production purposes such as the medical, automotive, aerospace and mechanical sectors.
FEATURES OF THE MACHINE:
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Carbon Pulsed Arc Plasma Source at Low Temperature, max 100°C (Carbon Source)
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Titanium Arc Plasma Source (Titan Source)
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Ion Plasma Source (Ion Source)
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Bias Substrate (BIAS)
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Remote table with a trolley (68 Axes Mobile Carousel, Ø400mm)
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Working area - Ø: 500mm H: 150mm
FEATURES OF THE PROCESS & TECHNOLOGY:
Diamond coatings of Diamond-like Carbon (DLC)
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Reduce friction.
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Reduce wear.
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Are made from graphite and energy.
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Are made without toxic byproducts or harmful waste.
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Can be deposited on almost anything that can be put in a vacuum.
DLC films are generally amorphous (i.e have no dominant crystalline lattice structure) and consist of a mixture of sp2 (graphite) & sp3 (diamond) phases.
Control of film properties is strongly dependent on the flux characteristics of the chosen deposition technique (PVD sputter or evaporation and Pa-CVD), metal and hydrogen content within the film, sp2:sp3 ratio, substrate bias voltage, ion energy and ion density as well as substrate temperature.
DLC film friction coefficient against steel generally ranges from 0.05-0.20, whilst film hardness and sp3 content can be tailored for specific applications.
Metal and hydrogen containing DLC (Me-DLC or a-C:H:Me) exhibit hardness in the range 500-2000HV with 35% sp3, metal free DLC
(C-DLC or a-C:H) typically 1500-4000HV and up to 75% sp3 , whilst tetrahedral amorphous carbon (ta-C) can be 4000-9000HV with 80-85% sp3.
Set of Pulse Plasma Carbon Gun
Description:
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Pulse Plasma Carbon Gun ISO200
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Capacitors Unit
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Power supply
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32 sets of Graphite parts
Spear parts
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Anode
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Ignition Unit
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Ceramic parts
Power supply:
Accumulator charging voltage 100 ÷ 350 V
Auxiliary anode supply voltage 300 V
3 points initialization pulse voltage amplitude 500 V
Initialization pulse frequency
(for capacitive accumulator of 2000 uF) 1 ÷ 20, step 1 Hz
Max pulses quantity per cycle 1 ÷ 999999